BSX26 november 1988 high-speed saturated switch the BSX26 is a silicon planar epitaxial npn transistor in jedec to-18 metal case. it is designed for switching applications up to 500 ma. absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e =0) 40 v v ces collector-emitter voltage (v be =0) 40 v v ceo collector-emitter voltage (i b =0) 15 v v ebo emitter-base voltage (i c =0) 4 v i c collector current 500 ma p tot total power dissipation at t amb 25 c at t case 25 c at t case 100 c 0.36 1.2 0.68 w w w t stg ,t j storage and junction temperature 65 to 200 c description to-18 internal schematic diagram 1/6 free datasheet http://www.datasheet.in/
electrical characteristics (t amb =25 c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ce s collector cutoff current (v be =0) v ce =20v v ce =20v t am b =85 c 0.5 15 m a m a v (br)cbo collector-base breakdown voltage (i e =0) i c =100 m a40 v v (br)ces collector-emitter breakdown voltage (v be =0) i c =100 m a40 v v (br)ceo * collector-emitter breakdown voltage (i b =0) i c =10ma 15 v v (br)ebo emitter-base breakdown voltage (i c =0) i e =100 m a4 v v ce(sat) * collector-emitter saturation voltage i c =30ma i c =100 ma i c =300 ma i c =30ma t amb =85 c i b =3 ma i b =10 ma i b =30 ma i b =3 ma 0.16 0.18 0.39 0.18 0.18 0.28 0.5 0.3 v v v v v be(sat) * base-emitter saturation voltage i c =30ma i c =100 ma i c =300 ma i b =3 ma i b =10 ma i b =30 ma 0.75 0.82 0.97 1.3 0.95 1.2 1.7 v v v h fe * dc current gain i c =30ma i c =100 ma i c =300 ma v ce = 0.4 v v ce = 0.5 v v ce =1v 30 25 15 60 55 120 f t transition frequency i c =30ma f = 100 mhz v ce =10v 350 550 mhz c ebo emitter-base capacitance i c =0 f = 1 mhz v eb = 0.5 v 6.5 8 pf c cbo collector-base capacitance i e =0 f = 1 mhz v cb =5v 3.3 5 pf t s storage time i c =10ma v cc =10v i b1 = i b2 = 10 ma 8 18 ns t on ** turn-on time i c =300 ma i b1 =30ma v cc =15v 9 15 ns t off ** turn-off time i c = 300 ma v cc =15v i b1 = i b2 =30ma 15 25 ns * pulsed : pulse duration = 300 m s, duty cycle = 1% ** see test circuit. thermal data r th j-case r th j-amb thermal resistance junction-case thermal resistance junction-ambient max max 146 486 c/w c/w BSX26 2/6 free datasheet http://www.datasheet.in/
dc current gain. collector-emitter saturation voltage. base-emitter saturation voltage. emitter-base and collector-base capacitances. contours of constant transition frequency. switching characteristics. BSX26 3/6 free datasheet http://www.datasheet.in/
test circuit for t on ,t off . pulse generator : t r ,t f < 1.0ns pw 240ns z in =50 w to oscilloscope : t r < 1.0ns z in 100k w BSX26 4/6 free datasheet http://www.datasheet.in/
dim. mm inch min. typ. max. min. typ. max. a 12.7 0.500 b 0.49 0.019 d 5.3 0.208 e 4.9 0.193 f 5.8 0.228 g 2.54 0.100 h 1.2 0.047 i 1.16 0.045 l45 o 45 o l g i da f e b h c to-18 mechanical data 0016043 BSX26 5/6 free datasheet http://www.datasheet.in/
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a BSX26 6/6 free datasheet http://www.datasheet.in/
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